1. 个人简介
蒋华平，男，1982年生，博士，“百人计划”特聘研究员，博士生导师。从事电力电子器件及其应用技术研究18年，其中碳化硅电力电子10余年：中国中车2年、英国丹尼克斯（Dynex Semiconductor Ltd）4年、英国华威大学（University of Warwick）2年、重庆大学5年。兼备学术研究和产品研发，贯通电力电子和功率半导体芯片。重庆大学教学与科研期间，着力于高速发展的国际前沿领域——碳化硅电力电子，契合国家双碳和新能源战略。打造《功率微电子学》等课程，破除芯片与电路间壁垒，将芯片、封装、测试和应用融为一体。所培养的复合型人才，多人在中国华为、中电集团、英国华威大学、怀柔国家实验室等国内外一流企事业单位居于核心岗位，为中国乃至世界碳化硅电力电子的发展做出突破性贡献。
在IEEE Trans. Power Electronics、IEEE Electron Device Letter、IEEE Trans. Electron Devices等顶级期刊和ISPSD等顶级会议上，发表学术论文共计70余篇，其中期刊论文40余篇、会议论文30余篇。中国发明专利30余项，其中已授权26项，英国发明专利2项。牵头制定第三代半导体联盟团体标准1项，参与制定美国JEDEC标准1项。
长期专注于SiC功率半导体芯片、封装以及应用技术研究。在SiC芯片方面，研究阈值稳定性、双极退化等可靠性物理机理，提出新型芯片结构、开发芯片测试和筛选技术。在SiC封装方面，研究雪崩、过载等复杂应力下老化失效机理，提出相变模块等高冲击应力耐受能力的新型封装结构。在SiC器件应用方面，研究并联分流机制，提出新型测评技术、栅极驱动方法、在线监测方法和控制策略。
在碳化硅MOSFET阈值动态漂移研究处于国际领先水平，揭示了栅极应力极性对触发动态漂移的决定性作用，给出了应力极性的定义，提出了局域电场增强模型，为揭示其物理机理指明了方向。研究成果被德国Infineon公司在其国际专利、学术论文和JEDEC标准中引用不少于7次。在碳化硅MOSFET阈值稳定性方面系统且深入的研究，最早于国际顶级期刊IEEE Electron Device Letter上报道，得到德国Infineon、美国泰克和中国华为等国际一流公司高度认可和/或合作邀请。提出非对称MMC子模块，首次于国际顶级期刊IEEE Trans. Power Electronics报道，获得南方电网高度认可。
2001-09 至 2012-12, 电子科技大学, 微电子学, 学士/硕士/博士
2013-03 至 2018-05, 株洲中车时代电气股份有限公司，SiC研发工程师
2014-07 至 2018-05, 英国丹尼克斯公司（Dynex Semiconductor Ltd.），SiC研发工程师
2016-02 至 2018-02, 英国华威大学（University of Warwick），访问学者
2018-08 起, 重庆大学, 研究员
2. 研究方向
碳化硅属于宽禁带半导体，其临界击穿电场比硅高出约一个量级。这就使得基于碳化硅制作的MOSFET的电压电流等级，可延伸覆盖硅基IGBT的电压电流等级。用单极型的MOSFET与双极型的IGBT竞争，在开关损耗方面具有降维打击效果。然而，碳化硅MOSFET存在动态阈值漂移等长期可靠性问题，导致特斯拉电动汽车召回事件，这正是如下实验室研究方向的起源。
研究方向（一）：碳化硅MOSFET长期可靠性
车规碳化硅MOSFET阈值稳定性、dv/dt耐受以及双极退化等可靠性物理机理、测试与评估方法、芯片与封装新结构、栅极驱动方法以及可靠性提升方法。
研究方向（二）：碳化硅MOSFET在电力电子中的应用
电动汽车等典型应用中，碳化硅MOSFET多芯片并联分流演化规律与机制、在线或原位监测方法、寿命评估方法与模型、控制策略与方法。
碳化硅电力电子是国家双碳和新能源战略的重要支点之一，属于典型卡脖子技术，是科技战主战场。相比于传统基于 IGBT 电力电子芯片，碳化硅电力电子芯片及其器件在小型、轻量和高效等方面具有碾压性优势，属于未来 30 年国际热门方向，急缺高层次、综合性人才。代表性应用领域是电动汽车（含充电桩）、光伏发电、直流和柔性直流输电。碳化硅电力电子方向横跨芯片、封装、测试和电路，毕业后知识面广而深，无论是从事电力电子装备开发还是功率半导体芯片设计制造，都具有技术和产业人才紧缺、迫切的需要。
欢迎电气工程、集成电路和物理学等学科/方向的学生报考博士或硕士研究生。
3. 项目情况
[1] SiC MOS阈值稳定性研究技术合作项目，184万，横向，主持
[2] SiC功率器件研究，468万，横向，主持
[3] 功率器件光伏逆变工况模拟系统开发项目，250万，横向，主持
[4] 碳化硅功率MOSFET阈值电压动态漂移测评服务项目，70万，横向，主持
[5] 柔直功率器件老化失效机理与表征方法研究，220万，横向，主持
[6] 碳化硅功率MOSFET阈值电压动态漂移测评技术开发项目，30万，横向，主持
[7] 先进车规级碳化硅功率MOSFET技术研发项目，12万，横向，主持
[8] 4500V沟槽型IGBT芯片高端技术研究，20万，横向，主持
[9] 基于数字孪生的含高渗透率新能源的重庆交直流混联系统仿真建模与平台研究，15万，横向，主持
[10] 新一代新能源汽车深度集成度电驱动系统关键技术研究与应用，30万，纵向，主持
[11] 机械式高压直流断路器检测与评估技术深化研究，75万，横向，主持
[12] 功率器件测试系统研发服务项目，30万，横向，主持
[13] 现代功率半导体器件测试与评估技术研发合作项目，39万，横向，主持
4. 实验条件
实验室依托重庆大学“输变电装备技术全国重点实验室”，以及与英国华威大学（University of Warwick）合作成立“中英碳化硅电力电子联合实验室”，拥有实验场地400平米，具备完整的研究开发碳化硅电力电子技术所需的软硬件条件。
软件方面，已购买TCAD仿真工具——瑞士Synopsys公司旗下Sentaurus软件包许可，用于SiC芯片设计与仿真；采用SolidWorks、Q3D和COMSOL进行SiC封装建模与模拟；拥有MATLAB/Simulink开展电力电子系统模拟与分析。
硬件方面，配备有Agilent B1505A以及Tektronix 371B功率器件分析仪/曲线追踪仪可以测试模块和器件的开关、正向导通及反向阻断特性；固纬LCR8110G高精度LCR测试仪用于测量芯片和模块的寄生参数；高精度数字示波器Tektronix MSO44 4-BW-1000（1GHz）、高精度红外热成像仪Flir E54（最高温度650℃）、可编程大功率直流电源IT6006D-800-25（800V/25A）、温度/湿度/振动三综合试验箱CH500CVTH（温度-70℃~200℃，湿度10%~95%，振动0.1Hz~10kHz）等设备和仪器共50余台/套；搭建的MMC子模块老化与在线监控平台、永磁同步电机对拖平台和光伏并网系统用于功率器件老化工况；自研的碳化硅MOSFET阈值稳定性测试装备用于研究开关应力下阈值动态漂移机理。
5. 专利（时间倒序）
[1] 蒋华平,廖瑞金,肖念磊. 一种漏极应力下器件稳定性测试电路（测量）.（申请中）
[2] 蒋华平,廖瑞金,肖念磊. 一种漏极应力下器件稳定性测试电路（解耦）.（申请中）
[3] 蒋华平,廖瑞金,汤磊.一种抑制并联器件阈值分散性增加的筛选匹配方法: CN117316799A [P],2023.（实审）
[4] 蒋华平,廖瑞金,赵柯.一种防止温漂的MOS器件栅极驱动方法及驱动电路: CN117200770A [P],2023.（实审）
[5] 蒋华平,廖瑞金,胡浩伟,肖念磊.一种用于功率器件的 dv/dt 耐受能力测试电路及方法: CN116840648A [P],2023.（实审）
[6] 蒋华平,廖瑞金,钟笑寒,谢宇庭,汤磊,赵柯,肖念磊. 多工作模式电路的控制装置及其控制方法: CN116743138A [P],2023. （授权）
[7] 蒋华平,廖瑞金,戚晓伟,钟笑寒,汤磊,赵柯,肖念磊. 绝缘栅型半导体器件的阈值电压恢复方法及相关产品: CN116743134A [P],2023. （授权）
[8] 蒋华平,廖瑞金,戚晓伟. MOS型半导体器件的阈值电压稳定性测试方法、测试设备:CN116203370 A[P],2023. （实审）
[9] 蒋华平,廖瑞金,赵柯. MOS 型半导体器件的栅极驱动电路和电力变换装置:CN 116436450A [P],2023. （授权）
[10] 蒋华平,廖瑞金,肖念磊. MOS型半导体器件阈值电压稳定测试方法和系统:CN 116359695A [P],2023. （授权）
[11] 蒋华平,廖瑞金,汤磊. MOS型半导体器件测试设备:CN 116520114A [P],2023. （实审）
[12] 蒋华平,廖瑞金,胡浩伟,钟笑寒,汤磊,肖念磊,赵柯.一种通过调节栅极电压提高功率器件过载的栅极驱动电路:CN 116366044A [P],2023. （授权）
[13] 蒋华平,廖瑞金,胡浩伟,钟笑寒,汤磊,肖念磊,赵柯.一种通过降低栅极电阻提高功率器件过载的栅极驱动电路:CN 116317480A [P],2023. （实审）
[14] 蒋华平,廖瑞金,谢宇庭,钟笑寒,汤磊,赵柯,肖念磊.导通压降检测电路、设备和电力变换装置:CN 116718884A [P],2023. （实审）
[15] 蒋华平,廖瑞金,肖念磊. MOS 型半导体器件的阈值电压稳定性测试方法、测试设备:CN 116068354A[P],2022. （授权）
[16] 蒋华平,廖瑞金,黄诣涵.MOS 型半导体器件的阈值电压稳定性测试电路: CN116224003A[P],2022. （授权）
[17] 蒋华平,冉立,廖瑞金,魏镜枫.一种基于衬底凹槽设计的高过载能力功率模块:CN 116230659A [P],2022. （实审）
[18] 蒋华平,冉立,廖瑞金,魏镜枫.一种基于芯片顶部金属块设计的高过载能力功率模块:CN 115863279A [P],2022. （实审）
[19] 蒋华平,吴泽兵,许超,刘立,冉立.一种基于器件开关电压变化率直接检测的动态调控电路及方法:CN115021739A[P],2022. （实审）
[20] 蒋华平,许超,吴泽兵,刘立,戚晓伟.一种抑制过冲尖峰的SiC MOSFET驱动电路:CN115173676A[P],2022. （实审）
[21] 毛婳,蒋华平,冉立等.功率半导体结构及断路器转移支路组件:CN112968007A[P],2021. （授权）
[22] 任海,冉立,刘立,蒋华平.一种压接型功率半导体结构及其内部压力在线测量方法:CN113834527A[P],2021. （实审）
[23] 任海,冉立,蒋华平,刘立,王小勇.压接型功率半导体模块结构及其子单元和制作方法:CN113066785A[P],2021. （实审）
[24] 刘立,冉立,蒋华平,王小勇.一种基于光纤光栅传感器的IGBT结温监测系统:CN112731095B[P],2020. （授权）
[25] 周敬森,魏金萧,谢刚文,冉立,张友强,蒋华平等.基于数字孪生技术的交直流混合电网全域实时模拟方法:CN112531694B[P],2020. （授权）
[26] 刘立,冉立,蒋华平,王小勇.基于光纤光栅传感器的电动汽车IGBT健康监测系统:CN112578255B[P],2020. （授权）
[27] 蒋华平,冉立.功率半导体模块结构:CN110379787A[P],2019.（失效）
[28] 高云斌,李诚瞻,赵艳黎,陈喜明,蒋华平等.碳化硅MOSFET器件及其制备方法:CN107275393A[P],2017. （失效）
[29] 赵艳黎,李诚瞻,高云斌,蒋华平等.一种沟槽栅碳化硅MOSFET器件及其制造方法:CN109698237A[P],2017.（实审）
[30] 陈万军,李震洋,蒋华平等.一种逆导型MOS栅控晶闸管及其制作方法:CN105679819B[P],2016.（授权）
[31] 郑昌伟,蒋华平,戴小平.短沟道半导体功率器件及其制备方法:CN107799592B[P],2016. （授权）
[32] H. Jiang, M. Ke, I. Deviny and J. Wei. A power MOSFET with an integrated Schottky diode:GB2569497B[P],2016.（PCT有效期满）
[33] H. Jiang, M. Ke, I. Deviny and J. Wei. A SiC trench transistor:GB2548126A[P],2016. （PCT有效期满）
[34] 赵艳黎,刘可安,李诚瞻,高云斌,蒋华平等.一种碳化硅MOS器件及其制造方法:CN104282765B[P],2015.（授权）
[35] 李诚瞻,吴煜东,赵艳黎,蒋华平等.一种新型碳化硅MOSFET及其制造方法:CN104282766A[P],2015.（失效）
[36] 赵艳黎,刘国友,李诚瞻,高云斌,蒋华平等.一种新型碳化硅MOSFET及其制造方法:CN104319292A[P],2015.
[37] 吴佳,吴煜东,刘可安,李诚瞻,史晶晶,蒋华平等.半导体器件耐压终端结构及其应用于SiC器件的制造方法:CN104882357A[P],2015.（失效）
[38] 李诚瞻,刘可安,吴煜东,杨勇雄,史晶晶,蒋华平等.肖特基势垒二极管及其制造方法:CN104576762B[P],2015.（授权）
[39] 蒋华平,戴小平,郑昌伟.一种功率半导体器件及其制作方法:CN105514155A[P],2015.（实审）
[40] 蒋华平,刘可安,吴煜东等.一种碳化硅功率器件结终端的制造方法:CN103824760B[P],2014.（授权）
[41] 李诚瞻,吴煜东,刘可安,周正东,史晶晶,杨勇雄,吴佳,蒋华平等.一种大电流碳化硅SBD/JBS功率芯片结构及其制造方法：CN103579016B[P],2014.（授权）
[42] 蒋华平,刘可安,吴煜东,李诚瞻,赵艳黎,吴佳,唐龙谷.一种功率器件结终端结构与制造方法:CN103824879B[P],2014.（授权）
[43] 杨勇雄,吴煜东,何多昌,蒋华平等.一种碳化硅功率器件结终端结构及其制造方法:CN103824878B[P],2014.（授权）
[44] 陈万军,蒋华平,章晋汉,张波.一种无snapback效应的逆导型绝缘栅双极晶体管:CN103022089A[P],2012.（实审）
6. 期刊论文（时间倒序）
[1] X. Zhong, C. Xu, H. Jiang, R. Liao, L. Tang, Y. Huang, K. Zhao, Ni. Xiao, X. Qi, L. Liu and Q. Zhang, "Recovery Performance of the Dynamic Threshold Voltage Drift of Silicon Carbide MOSFETs," in IEEE Transactions on Power Electronics, vol. 39, no. 6, pp. 7620-7631, June 2024.（一区）
[2] L. Tang, H. Jiang*, R. Liao, X. Zhong, K. Zhao, N. Xiao and Y. Huang, "Analyzing the Changes in the Third Quadrant Characteristics of SiC MOSFET Induced by Threshold Drift," in IEEE Transactions on Electron Devices, vol. 71, no. 4, pp. 2342-2348, April 2024. （二区）
[3] L. Tang, H. Jiang*, R. Liao, Y. Huang, X. Zhong, X. Qi, L. Liu and Q. Zhang, "Impact of the Threshold Dispersity Evolution on the Current Sharing of Parallel SiC MOSFETS," in IEEE Transactions on Power Electronics, vol. 39, no. 5, pp. 6312-6326, May 2024.（一区）
[4] L. Liu, L. Tang, H. Jiang*, F. Wei, Z. Li, C. Du, Q. Peng and G. Lu, "A study on reliability evaluation of IGBT power module on electric vehicle using big data," in Journal of Semiconductors, (Accept).
[5] J. Wei, H. Jiang*, N. Xiao, Z. Wu, L. Wang and L. Ran, "Multiple Phase Change Materials Integrated into Power Module for Normal and High Current Reliability Enhancement," in IEEE Transactions On Device and Materials Reliability, vol. 23, no. 1, pp. 127-133, March 2023.
[6] H. Mao, H. Jiang*, L. Ran, J. Hu, G. Qiu, J. Wei, H. Chen, X. Zhong, N. Xiao, L. Wang and M. Yang, "An Asymmetrical Power Module Design for Modular Multilevel Converter With Unidirectional Power Flow," in IEEE Transactions on Power Electronics, vol. 38, no. 1, pp. 1092-1103, Jan. 2023.（一区）
[7] L. Tang, H. Jiang*, X. Zhong, G. Qiu, H. Mao, X. Jiang, X. Qi, C. Du, Q. Peng, L. Liu and L. Ran, "Investigation Into the Third Quadrant Characteristics of Silicon Carbide MOSFET," in IEEE Transactions on Power Electronics, vol. 38, no. 1, pp. 1155-1165, Jan. 2023. （一区）
[8] H. Jiang*, X. Qi, G. Qiu, X. Zhong, L. Tang, H. Mao, Z. Wu, H. Chen and L. Ran, "A Physical Explanation of Threshold Voltage Drift of SiC MOSFET Induced by Gate Switching," in IEEE Transactions on Power Electronics, vol. 37, no. 8, pp. 8830-8834, Aug. 2022. （一区）
[9] X. Zhong, H. Jiang*, L. Tang, X. Qi, P. Jiang and L. Ran, "Gate Stress Polarity Dependence of AC Bias Temperature Instability in Silicon Carbide MOSFETs," in IEEE Transactions on Electron Devices, vol. 69, no. 6, pp. 3328-3333, June 2022. （二区）
[10] X. Zhong, H. Jiang*, G. Qiu, L. Tang, H. Mao, C. Xu, X. Jiang, J. Hu, X. Qi and L. Ran, "Bias Temperature Instability of Silicon Carbide Power MOSFET Under AC Gate Stresses," in IEEE Transactions on Power Electronics, vol. 37, no. 2, pp. 1998-2008, Feb. 2022. （一区）
[11] H. Mao, G. Qiu, X. Jiang, H. Jiang*, X. Zhong, L. Tang, Y. Zhang, L. Ran and Y. Wu, "Investigation on the Degradations of Parallel-Connected 4H-SiC MOSFETs Under Repetitive UIS Stresses," in IEEE Transactions on Electron Devices, vol. 69, no. 2, pp. 650-657, Feb. 2022. （二区）
[12] G. Qiu, L. Ran, H. Feng, H. Jiang*, T. Long, A. J. Forsyth, W. Shao and X. Hou, "A Fluxgate-Based Current Sensor for DC Bias Elimination in a Dual Active Bridge Converter," in IEEE Transactions on Power Electronics, vol. 37, no. 3, pp. 3233-3246, March 2022. （一区）
[13] Z. Wu, H. Jiang*, Z. Zheng, X. Qi, H. Mao, L. Liu and L. Ran, "Dynamic dv/dt Control Strategy of SiC MOSFET for Switching Loss Reduction in the Operational Power Range," in IEEE Transactions on Power Electronics, vol. 37, no. 6, pp. 6237-6241, June 2022. （一区）
[14] X. Jiang, H. Jiang*, X. Zhong, H. Mao, Z. Wu, L. Tang, H. Chen, J. Cheng and L. Ran, "Impact of Gate Resistance on Improving the Dynamic Overcurrent Stress of the Si/SiC Hybrid Switch," in IEEE Transactions on Power Electronics, vol. 37, no. 11, pp. 13319-13331, Nov. 2022. （一区）
[15] L. Tang, H. Jiang*, J. Wei, Q. Hu, X. Zhong and X. Qi, “A comparative study of SiC MOSFETs with and without integrated SBD,” in Microelectronics Journal, vol. 128, pp. 0026-2692, Oct. 2022.
[16] H. Ren*, L. Ran, X. Liu, L. Liu, S. Djurović, H. Jiang*, M. Barnes and P. A. Mawby, "Quasi-Distributed Temperature Detection of Press-Pack IGBT Power Module Using FBG Sensing," in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 10, no. 5, pp. 4981-4992, Oct. 2022. （二区）
[17] G. Qiu, L. Ran, H. Feng, H. Jiang, H. Mao and J. Wei, "A High-Precision Sensor Based on AC Flux Cancellation for DC Bias Detection in Dual Active Bridge Converters," in IEEE Transactions on Power Electronics, vol. 37, no. 11, pp. 13513-13524, Nov. 2022.（一区）
[18] J. Yang, Y. Che, L. Ran, M. Du, H. Jiang and M. Xiao, "Monitoring Initial Solder Layer Degradation in a Multichip IGBT Module via Combined TSEPs," in IEEE Transactions on Device and Materials Reliability, vol. 22, no. 1, pp. 26-35, March 2022.
[19] H. Jiang*, J. Wei, X. Fang, H. Ren, W. Shao and L. Ran, "A ᐃTj Reduced Power Module With Inbuilt Phase Change Material for Reliability Enhancement," in IEEE Transactions on Electron Devices, vol. 68, no. 9, pp. 4557-4564, Sept. 2021. （二区）
[20] B. Hu, Z. Hu, L. Ran, C. Ng, C. Jia, P. McKeever, P. J. Tavner, C. Zhang, H. Jiang and P. A. Mawby, "Heat-Flux-Based Condition Monitoring of Multichip Power Modules Using a Two-Stage Neural Network," in IEEE Transactions on Power Electronics, vol. 36, no. 7, pp. 7489-7500, July 2021. （一区）
[21] H. Ren, W. Shao, L. Ran, G. Hao, L. Zhou, P. Mawby and H. Jiang, "A Phase Change Material Integrated Press Pack Power Module With Enhanced Overcurrent Capability for Grid Support—A Study on FRD," in IEEE Transactions on Industry Applications, vol. 57, no. 4, pp. 3956-3968, July-Aug. 2021.
[22] L. Liu, C. Du, Q. Peng, J. Chen, Y. Wang, Y. Chen, Z. Peng, H. Jiang and L. Ran, "An investigation on IGBT junction temperature estimation using online regression method," in Microelectronics Reliability, vol. 124, pp. 0026-2714, Sept. 2021.
[23] H. Jiang*, X. Zhong, G. Qiu, L. Tang, X. Qi and L. Ran, "Dynamic Gate Stress Induced Threshold Voltage Drift of Silicon Carbide MOSFET," in IEEE Electron Device Letters, vol. 41, no. 9, pp. 1284-1287, Sept. 2020. （二区）
[24] J. Yang, Y. Che, L. Ran and H. Jiang, "Evaluation of Frequency and Temperature Dependence of Power Losses Difference in Parallel IGBTs," in IEEE Access, vol. 8, pp. 104074-104084, 2020.
[25] W. Shao, R. Wu, L. Ran, H. Jiang, P. A. Mawby, D. J. Rogers, T. C. Green, T. Coombs, K. Yardley, D. Kastha, P. Bajpai and L. Zhou, "A Power Module for Grid Inverter With In-Built Short-Circuit Fault Current Capability," in IEEE Transactions on Power Electronics, vol. 35, no. 10, pp. 10567-10579, Oct. 2020. （一区）
[26] M. Zhang, J. Wei, X. Zhou, H. Jiang, B. Li and K. J. Chen, "Simulation Study of a Power MOSFET With Built-in Channel Diode for Enhanced Reverse Recovery Performance," in IEEE Electron Device Letters, vol. 40, no. 1, pp. 79-82, Jan. 2019. （二区）
[27] J. Wei, M. Zhang, H. Jiang, X. Zhou, B. Li and K. J. Chen, "Superjunction MOSFET With Dual Built-In Schottky Diodes for Fast Reverse Recovery: A Numerical Simulation Study," in IEEE Electron Device Letters, vol. 40, no. 7, pp. 1155-1158, July 2019. （二区）
[28] J. Wei, M. Zhang, H. Jiang, B. Li and K. J. Chen, "Gate Structure Design of SiC Trench IGBTs for Injection-Enhancement Effect," in IEEE Transactions on Electron Devices, vol. 66, no. 7, pp. 3034-3039, July 2019. （二区）
[29] W. Shao, X. Li, H. Jiang, X. Guo, Z. Zheng, L. Ran and P. Mawby, " Power Loss Comparison in a BOOST PFC Circuit Considering the Reverse Recovery of the Forward Diode," in Materials Science Forum, vol. 963, pp. 873-877, July 2019.
[30] T. Dai, C. Chan, X. Deng, H. Jiang, P. Gammon, M. M.,Jennings and P. A. Mawby, "4H-SiC trench MOSFET with integrated fast recovery MPS diode," in Electronics Letters, vol. 54, no. 3, pp. 167-169, Feb. 2018.
[31] Y. Sharma, H. Jiang, C. Zheng, X. Dai, Y. Wang and I. Deviny, "Impact of design and process variation on the fabrication of SiC diodes," in Journal of Semiconductors, vol. 39, no. 11, pp. 25-30, Nov. 2018.
[32] Y.K Sharma, H. Jiang, C. Zheng, X. Dai and I. Deviny, "Effect of Design Variations and N2O Annealing on 1.7kV 4H-SiC Diodes," in Materials Science Forum, vol. 924, pp. 428-431, June 2018.
[33] J. Wei, M. Zhang, H. Jiang, H. Wang and K. J. Chen, "Dynamic Degradation in SiC Trench MOSFET With a Floating p-Shield Revealed With Numerical Simulations," in IEEE Transactions on Electron Devices, vol. 64, no. 6, pp. 2592-2598, June 2017. （二区）
[34] M. Zhang, J. Wei, H. Jiang, K. J. Chen and C. H. Cheng, "A New SiC Trench MOSFET Structure With Protruded p-Base for Low Oxide Field and Enhanced Switching Performance," in IEEE Transactions on Device and Materials Reliability, vol. 17, no. 2, pp. 432-437, June 2017.
[35] M. Zhang, J. Wei, H. Jiang, K. J. Chen and C. Cheng, "SiC trench MOSFET with self-biased p-shield for low RON-SP and low OFF-state oxide field," in IET Power Electronics, vol. 10, no. 10, pp. 1208-1213, June 2017.
[36] J. Wei, M. Zhang, H. Jiang, C. -H. Cheng and K. J. Chen, "Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges," in IEEE Electron Device Letters, vol. 37, no. 11, pp. 1458-1461, Nov. 2016. （二区）
[37] H. Jiang, J. Wei, X. Dai, M. Ke, I. Deviny and P. Mawby, "SiC Trench MOSFET With Shielded Fin-Shaped Gate to Reduce Oxide Field and Switching Loss," in IEEE Electron Device Letters, vol. 37, no. 10, pp. 1324-1327, Oct. 2016. （二区）
[38] J. Wei, H. Jiang, Q. Jiang and K. J. Chen, "Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications," in IEEE Transactions on Electron Devices, vol. 63, no. 6, pp. 2469-2473, June 2016. （二区）
[39] H. Jiang, M. Ke, Y. Sharma, X. Dai, I. Deviny and C. Zheng, "Optimum Design of 4H-SiC Junction Barrier Schottky Diode with Consideration of the Anisotropic Impact Ionization," in Materials Science Forum, vol. 858, pp. 745-748, May 2016.
[40] X. Deng, C. Rao, J. Wei, H. Jiang, M. Chen, X. Wang and B. Zhang, "High Voltage SiC JBS Diodes with Multiple Zone Junction Termination Extension Using Single Etching Step," in Materials Science Forum, vol. 778-780, pp. 808-811, Feb. 2014.
[41] H. Jiang, B. Zhang, W. Chen, Z. Li, C. Liu, Z. Rao and B. Dong, "A Snapback Suppressed Reverse-Conducting IGBT With a Floating p-Region in Trench Collector," in IEEE Electron Device Letters, vol. 33, no. 3, pp. 417-419, March 2012, （一区）
[42] H. Jiang, J. Wei, B. Zhang, W. Chen, M. Qiao and Z. Li, "Band-to-Band Tunneling Injection Insulated-Gate Bipolar Transistor with a Soft Reverse-Recovery Built-In Diode," in IEEE Electron Device Letters, vol. 33, no. 12, pp. 1684-1686, Dec. 2012. （一区）
[43] H. Jiang, B. Zhang, C. Liu, W. Chen, Z. Rao and B. Dong, "Experimental study of the anode injection efficiency reduction of 3.3-kV-class NPT-IGBTs due to backside processes," in Journal of Semiconductors, vol. 33, no. 2, pp. 41-44, Feb. 2012.
[44] H. Jiang, W. Chen, C. Liu, Z. Rao, B. Dong and B. Zhang, "Design and optimization of linearly graded-doping junction termination extension for 3.3-kV-class IGBTs," in Journal of Semiconductors, vol. 32, no. 12, pp. 72-75, Dec. 2011.
[45] J. Fang, H. Jiang, M. Qiao, B. Zhang and Z. Li, "A Static-State Model of NPT-IGBTs with Localized Lifetime Control," in Journal of Semiconductors, vol. 27, pp. 857-863, May 2006.
7. 会议论文（时间倒序）
[1] H. Mao, H. Jiang, L. Ran, H. Chen, Y. Xie and M. Yang, "Electrical and Thermal Performances of IGCT in High Voltage DC Circuit Breaker," 2022 2nd International Conference on Electrical Engineering and Control Science (IC2ECS).
[2] H. Mao, H. Jiang, G. Qiu, Y. Zhang, X. Zhong, H. Feng and L. Ran, "Single-Pulse Avalanche Failure Characterization of Single and Paralleled SiC MOSFETs," 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), pp. 467-471, 2021.
[3] X. Jiang, H. Jiang, H. Yu, J. Jiang, H. Feng, H. Mao, L. Tang, X. Zhong and L. Ran, "Impact of Gate Resistances on Switching-on Behaviors of Si/SiC Hybrid Switch," 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), pp. 478-482, 2021.
[4] L. Tang, H. Jiang, H. Mao, Z. Wu, X. Zhong, X. Qi and L. Ran, "The Influence of Dynamic Threshold Voltage Drift on Third Quadrant Characteristics of SiC MOSFET," 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), pp. 483-487, 2021.
[5] Z. Wu, H. Jiang, X. Qi, H. Mao, S. Niu, S. Niu, L. Tang and L. Ran, "A dv/dt Control Strategy of SiC MOSFET for Turn-off Loss Reduction within Entire Operational Power Range," 2021 IEEE International Conference on Electrical Engineering and Mechatronics Technology (ICEEMT), pp. 424-428, 2021.
[6] C. Xu, X. Zhong, H. Jiang, G. Qiu, L. Tang and L. Ran, "Impact of Duty Cycle and Junction Temperature on Dynamic Threshold Drift of SiC MOSFET," 2021 4th International Conference on Energy, Electrical and Power Engineering (CEEPE), pp. 347-350, 2021.
[7] J. Hu, G. Qiu, W. Wang, L. Ran, K. Ma and H. Jiang, "An On-line Capacitor Condition Monitoring Method Based on Switching Frequencies For Modular Multilevel Converters," 2021 4th International Conference on Energy, Electrical and Power Engineering (CEEPE), pp. 183-187, 2021.
[8] Z. Zheng, W. Shao, H. Jiang and L. Ran, "A Single-Phase Direct AC-AC Converter Using SiC Devices for Inherent Power Factor Correction Capability," 2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia), pp. 1344-1349, 2021.
[9] G. Qiu, L. Ran, H. Jiang, T. Long, A. Forsyth and W. Shao, "A Method for Detecting DC Bias in Transformer of Dual Active Bridge DC-DC Converter," 2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia), pp. 714-719, 2021.
[10] H. Mao, H. Jiang, J. Hu, L. Ran, Y. Wu, Z. Lv and D. Yang, "Asymmetrical Power Module for Modular Multilevel Converter with Lower Power Loss and Peak Junction Temperature," 2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia), pp. 644-649, 2021.
[11] X. Fang, H. Jiang, X. Wang, W. Shao, H. Ren, L. Ran and H. Mao, "Reliability Enhancement of Power Modules by Restricting Junction Temperature Fluctuation through Increased Transient Thermal Capacity," 2020 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 4024-4028, 2020.
[12] H. Ren, G. Hao, W. Shao, L. Ran, L. Zhou, P. Mawby and H. Jiang, "Thermal Buffering Effect of Phase Change Material on Press-pack IGBT during Power Pulse," 2019 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 4937-4943, 2019.
[13] W. Shao, R. Wu, L. Ran, H. Jiang, T. Coombs, K. Yardley, P. Mawby, D. Kastha and P. Bajpai, "Enhanced Over-current Capability and Extended SOA of Power Modules Utilizing Phase Change Material," 2019 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 5315-5320, 2019.
[14] J. Wei, M. Zhang, H. Jiang, B. Li, Z. Zheng and K. J. Chen, "Investigations of p-Shielded SiC Trench IGBT with Considerations on IE Effect, Oxide Protection and Dynamic Degradation," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 199-202, 2019.
[15] J. Wei, M. Zhang, H. Jiang, S. To, S. Kim, J. -Y. Kim and K. J. Chen, "SiC trench IGBT with diode-clamped p-shield for oxide protection and enhanced conductivity modulation," 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 411-414, 2018.
[16] W. Shao, L. Ran, Z. Zeng, R. Wu, P. Mawby, H. Jiang, D. Kastha, P. Bajpai, "Power Module with Large Short Term Current Capability by Using Phase Change Material," 2018 14th IET International Conference on AC and DC Power Transmission (ACDC), pp. 3225-3229, 2018.
[17] W. Shao, L. Ran, Z. Zeng, R. Wu, P. Mawby, H. Jiang, D. Kastha and P. Bajpai, "Power Modules for Pulsed Power Applications Using Phase Change Material," 2018 Second International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM), pp. 1-6, 2018.
[18] X. Li, H. Jiang, B. Hu, H. Chen, Z. Zeng, L. Ran and P. Mawby, "Electro-Thermal Limited Switching Frequency for Parallel Diodes," 2018 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 4692-4698, 2018.
[19] H. Jiang, J. Wei, X. Dai, C. Zheng, M. Ke, X. Deng, Y. Sharma, I. Deviny and P. Mawby, "SiC MOSFET with built-in SBD for reduction of reverse recovery charge and switching loss in 10-kV applications," 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), pp. 49-52, 2017.
[20] J. Wei, Y. Wang, M. Zhang, H. Jiang and K. J. Chen, "High-speed power MOSFET with low reverse transfer capacitance using a trench/planar gate architecture," 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), pp. 331-334, 2017.
[21] J. Wei, M. Zhang, H. Jiang, H. Wang and K. J. Chen, "Charge storage effect in SiC trench MOSFET with a floating p-shield and its impact on dynamic performances," 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), pp. 387-390, 2017.
[22] X. Dai, H. Jiang, C. Zheng and M. Ke, "SiC Power MOSFET with Monolithically Integrated Schottky Barrier Diode for Improved Switching Performances," PCIM Europe 2017; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, pp. 1-4, 2017.
[23] H. Jiang, J. Wei, X. Dai, M. Ke, C. Zheng and I. Deviny, "Silicon carbide split-gate MOSFET with merged Schottky barrier diode and reduced switching loss," 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 59-62, 2016.
[24] J. Wei, H. Jiang, Q. Jiang and K. J. Chen, "Proposal of a novel GaN/SiC hybrid FET (HyFET) with enhanced performance for high-voltage switching applications," 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 99-102, 2016.
[25] M. Ke, D. Li, X. Dai, H. Jiang, I. Deviny, H. Luo and G. Liu, "Improved surge current capability of power diode with copper metallization and heavy copper wire bonding," 2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe), pp. 1-6, 2016.
[26] K. Mao, M. Qiao, L. Jiang, H. Jiang, Z. Li, W. Chen, Z. Li and B. Zhang, "A 0.35 μm 700 V BCD technology with self-isolated and non-isolated ultra-low specific on-resistance DB-nLDMOS," 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), pp. 397-400, 2013.
[27] W. Chen, J. Zhang, B. Zhang, H. Jiang and Z. Li, "The SuperJunction MOS-controlled thyristor (SJ-MCT) with low power loss for high-power switching applications," 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, pp. 1-3, 2012.
[28] H. Jiang, B. Zhang, W. Chen, C. Liu, Z. Rao and B. Dong, "A Snapback Suppressed Reverse Conducting IGBT with Oxide Trench Collector," 2012 Asia-Pacific Power and Energy Engineering Conference, pp. 1-4, 2012.
[29] H. Jiang, B. Zhang, W. Chen, Z. Li, C. Zheng, C. Liu, Z. Rao and B. Dong, "A simple method to design the single-mask multi-zone junction termination extension for high-voltage IGBT," 2012 24th International Symposium on Power Semiconductor Devices and ICs, pp. 173-176, 2012.
[30] M. Qiao, Y. He, H. Wen, X. Zhou, L. Jiang, H. Jiang, X. Luo, Z. Li, B. Zhang, Z. Chen, Y. Su, Z. Xiao and C. Wang, "High-voltage thin layer SOI technology for negative power supply," 2012 24th International Symposium on Power Semiconductor Devices and ICs, pp. 201-204, 2012.
